HCS L36: System for Characterizing the Hall Effect
The LINSEIS HCS L36 is a modular Hall-effect characterization system for the precise determination of the electrical transport properties of semiconductors, thin films , and functional materials. It simultaneously measures the carrier concentration, Hall mobility, and Hall coefficients , and the resistivity over a wide temperature range under vacuum or in controlled atmospheres.
With three system configurations, interchangeable sample holders, and optional Seebeck,, Hall bar, and illumination modules, the HCS L36 can be customized to meet the requirements of research, development, and industrial quality control.
Unique features
Electronics upgrade
The redesigned HCS L36 electronics offer higher measurement accuracy, improved signal stability, and faster data acquisition. An optimized hardware architecture, combined with intelligent control electronics, ensures reliable Hall-effect measurements across the entire temperature range.
The advantages of the new electronics include:
- Higher signal stability
Ensures reliable Hall voltage measurements, even with samples exhibiting low mobility or high resistance. - Improved Measurement Accuracy
The optimized electronics minimize noise and increase precision in determining electrical transport properties. - Faster Data Acquisition
Shorter measurement times thanks to optimized control and signal processing. - Excellent reproducibility
The highly stable electronics guarantee consistent results during repeated measurements and in long-term operation.
New Hardware Features
- Halbach Magnetic Technology
Generates an extremely homogeneous magnetic field with improved field stability, enabling precise and reproducible Hall-effect measurements across the entire sample area. - Modular sample holder concept
Interchangeable plug-and-play sample holders support Van der Pauw, Hall-Bar, Seebeck and illumination measurements while minimizing setup time. - Integrated EPROM Sample Holder Recognition
Smart sample holders are automatically recognized, and the corresponding measurement parameters are loaded directly into the software, reducing the effort required to operate the system and preventing setup errors. - Wide-range temperature chamber
The gas-tight measuring chamber enables Hall measurements of cryogenic temperatures up to 600 °C under vacuum or in controlled gas atmospheres. - Extensible system architecture
The modular hardware concept allows for easy expansion from the “Basic” to the “Advanced” or “Ultimate” configuration, including AC Hall measurements, integration of a lock-in amplifier and additional characterization modules.
Design improvements
The redesigned HCS L36 combines a compact layout of controls with improved accessibility and ergonomic operation. The new housing design, intuitive touchscreen display, and modular architecture simplify daily operation while offering maximum flexibility for a wide range of characterization tasks in the Hall effect field.
Intelligent Sample Holder Detection
The HCS L36 automatically detects the sample holder being used via integrated EPROM technology. The measurement parameters are loaded automatically, which reduces setup time and minimizes the risk of incorrect configurations.
Modular Sample Holder System
The modular plug-and-play design supports a wide variety of sample holders for Van der Pauw, Hall bar, Seebeck, and illumination measurements. The sample holders can be swapped out in seconds without the need for recalibration, allowing the system to be quickly adapted to different applications.
Software improvements
The LiEAP software combines measurement control, automation, and advanced data analysis on a single platform. Automated measurement sequences, intelligent parameter management, and comprehensive reporting enhance efficiency while ensuring maximum reproducibility.
Scalable System Architecture
Thanks to its modular design, the HCS L36 can be customized to meet your requirements. The system can be upgraded from the “Basic” to the “Advanced” or “Ultimate” configuration and expanded with optional modules such as AC Hall measurements, the integration of a lock-in amplifier, Seebeck measurements, or illumination systems.
Highlights
Modular Sample Holders
Interchangeable holders for Van der Pauw, Hall-Bar, Seebeck, and illuminance measurements.
Wide temperature range: measurements from
low temperatures (LN2) up to 600°C possible.
Halbach Magnet Technology
An extremely homogeneous magnetic field for maximum accuracy and reproducibility in Hall measurements.
LiEAP Software Platform
Integrated measurement control, automation, and advanced data analysis.
Plug-and-Play Integration
The intelligent EPROM detection feature automatically identifies installed sample holders and loads the correct measurement configuration.
Key features
Wide temperature range
-196 °C to +600 °C
Precise characterization of the Hall effect—from cryogenic temperatures to high-temperature semiconductor analysis.
Magnetic field
Halbach magnet with up to 0.5 tesla
An extremely homogeneous magnetic field for maximum measurement accuracy and reproducibility in Hall measurements.
Electrical Parameters
4 Parameters in a Single Measurement
Simultaneous determination of the Hall coefficient, the carrier concentration, the Hall mobility, and the resistivity.
Integrated LINSEIS platform
The integrated LINSEIS software offers a comprehensive solution that combines hardware and software for maximum process reliability and precision. The standardized platform enables seamless integration of components and devices from external partners – for a particularly robust and reliable overall system.
Questions? Just give us a call!
+1 (609) 223 2070
+49 (0) 9287/880 0
Thursday from 8 am to 4 pm
and Friday from 8 am to 12 pm.
We are here for you!
Specifications
Measured parameters: Hall coefficient, Hall mobility, carrier concentration, and resistivity
Temperature range: -196 °C to +600 °C
Magnetic field: Up to 0.5 T homogeneous Halbach magnet
Discover the high-performance HCS L36—designed for maximum accuracy and flexibility in Hall effect characterization:
- Measurement methods: DC Hall, AC Hall (optional), Van der Pauw, Hall bar
- Sample holders: Standard, Hall-Bar, Seebeck, illuminated, and custom sample holders
- Sample size: Up to 12.5 × 12.5 mm² with plug-and-play sample holders
- Atmospheres: Vacuum, as well as controlled inert, oxidizing, or reducing gas atmospheres
- Expandable system: Can be expanded from “Basic” to “Advanced” to “Ultimate” with optional Seebeck, AC Hall, and lighting modules
Method
Characterization of the Hall Effect
Characterization using the Hall effect is one of the most powerful methods for determining the electrical transport properties of conductive and semiconducting materials. By applying a magnetic field while simultaneously passing a defined current through the sample, important electrical parameters can be precisely determined under controlled temperature and environmental conditions.
Unlike measurements that merely determine electrical resistance, the Hall effect provides direct information about the type, concentration, and mobility of charge carriers. This makes the method indispensable for semiconductor research, materials development, and quality control.
The HCS L36 combines precise magnetic field generation, accurate current control, and advanced voltage measurement in a single platform. Measurements can be performed from cryogenic temperatures up to 600 °C, under vacuum or in controlled gas atmospheres, enabling reliable characterization of modern semiconductor materials, thin films, and functional electronic materials.
Characterization using the Hall effect is particularly valuable for investigating charge carrier concentration, Hall mobility, resistivity, conductivity, and Hall coefficients. These parameters provide comprehensive insights into charge transport mechanisms and support the development and optimization of electronic materials and devices.
How the HCS L36 Basic Works
The HCS L36 Basic determines the electrical transport properties of conductive and semiconducting materials using the classical Hall effect method. In this process, a defined electrical current is applied to the sample while a homogeneous magnetic field is generated by the integrated Halbach magnet. The resulting Hall voltage is measured with high precision.
During each measurement, the system continuously records the key electrical parameters required for comprehensive material characterization:
- Hall voltage – Results from the interaction between an electric current and a magnetic field.
- Electrical resistance – Measured simultaneously to determine the specific resistance of the sample.
By combining both measurements under identical conditions, the HCS L36 Basic precisely determines the Hall coefficient, the carrier concentration, the Hall mobility, and the resistivity. This configuration is ideal for the routine characterization of bulk materials, thin films, and semiconductor samples using the Hall effect.
How the HCS L36 Advanced Works
The HCS L36 Advanced expands upon the classic Hall effect measurement by incorporating a temperature-controlled measurement chamber. Samples can be characterized from cryogenic temperatures up to 600 °C under vacuum or in controlled gas atmospheres, while maintaining highly stable magnetic field conditions.
During the measurement, the system continuously records:
- Hall Voltage – For determining the Hall coefficient and the carrier concentration.
- Electrical Resistance – For accurate calculations of resistivity and conductivity.
- Temperature-dependent material properties – Characterized across the entire measurement range.
The combination of precise temperature control, uniform magnetic field generation, and automated data acquisition enables a comprehensive investigation of charge transport mechanisms, temperature-dependent electrical behavior, and semiconductor performance.
How the HCS L36 Ultimate Works
The HCS L36 Ultimate combines high-precision Hall-effect measurements with advanced characterization of electrical transport properties in a fully modular platform. In addition to standard Hall measurements, the system supports optional AC Hall, Seebeck coefficient, Hall bar, gated Hall bar, and illumination measurements, enabling the comprehensive characterization of modern semiconductor materials and devices.
During operation, the HCS L36 Ultimate continuously records several electrical signals:
- Hall Voltage – For determining the charge carrier concentration and Hall mobility.
- Electrical Resistance – For precise measurements of resistivity and conductivity.
- Additional transport properties —such as the Seebeck coefficient or photoinduced electrical effects (optional).
Its modular hardware architecture, interchangeable sample holders, and integrated LiEAP software offer maximum flexibility for research, materials development, and advanced semiconductor characterization under precisely controlled environmental conditions.
Parameters in Hall Effect Measurements
Electrical transport properties determined using the Hall effect:
- Hall Coefficient (RH)
- Carrier concentration
- Hall Mobility
- Electrical resistivity
- Electrical conductivity
- Carrier Type (n-type / p-type)
- Temperature-Dependent Electrical Properties
- Magnetoresistance (optional)
Quantities Determined Using Seebeck Measurements
Thermoelectric properties using the optional Seebeck module:
- Seebeck coefficient
- Temperature-dependent Seebeck coefficient
- Thermoelectric voltage
- Carrier transport behavior
- Material Type Verification
- Characterization of Thermoelectric Materials
Measured variables with illuminated readings
Photoelectric characterization under controlled lighting conditions:
- Photoconductivity
- Photoinduced charge carrier concentration
- Photoinduced Hall Mobility
- Photoresponse
- Charge Carrier Dynamics
- Characterization of Semiconductors Under Illumination
Expand Your Options for Material Characterization
DSC L63
LSR-3 (LSR L33)
Questions? Just give us a call!
+1 (609) 223 2070
+49 (0) 9287/880 0
Thursday from 8 am to 4 pm
and Friday from 8 am to 12 pm.
We are here for you!
HCS L36 at a Glance – How It Works, Applications, Features, and Frequently Asked Questions
How does a Hall effect measurement work?
The HCS L36 measures the electrical transport properties of a material by applying a defined current while simultaneously exposing the sample to a homogeneous magnetic field. The resulting Hall voltage is used, together with the electrical resistance, to calculate key parameters such as the Hall coefficient, the carrier concentration, the Hall mobility, and the resistivity. This non-destructive method is frequently used for characterizing semiconductors and in research on electronic materials.
What materials can be measured with the HCS L36?
The HCS L36 is suitable for a wide range of conductive and semiconductive materials, including:
- Silicon (Si)
- Gallium nitride (GaN)
- Silicon carbide (SiC)
- Gallium arsenide (GaAs)
- Indium phosphide (InP)
- Transparent conductive oxides (ITO, AZO)
- Thin Films and Coatings
- Thermoelectric Materials
- Organic Semiconductors
- Conductive Polymers
What types of sample holders are available?
Thanks to its modular sample holder design, the HCS L36 can be adapted to a variety of applications.
Available sample holders include:
- Van der Pauw Sample Holder
- Hall-Bar Sample Holder
- Gated Hall Bar Sample Holder
- Seebeck Probe Holder
- Illuminated Sample Holder
- Custom-made sample holders for specialized applications
All sample holders feature plug-and-play functionality with automatic detection for quick and reliable setup.
Which measurement methods are supported?
Depending on the configuration selected, the HCS L36 supports:
- DC Hall Effect Measurements
- AC Hall measurements (optional)
- Van der Pauw measurements
- Hall-Bar Measurements
- Gated-Hall-Bar Measurements
- Seebeck Coefficient Measurements
- Illuminated Hall measurements
- Temperature-Dependent Hall Measurements
Which parameters can be determined?
The HCS L36 simultaneously measures several key electrical transport properties, including:
- Hall coefficient
- Carrier concentration
- Hall Mobility
- Electrical resistivity
- Electrical conductivity
- Carrier Type (n-type / p-type)
Optional configurations also allow for Seebeck coefficient and photoelectric measurements.
How much does an HCS L36 cost?
The price of an HCS L36 system depends on the selected configuration and additional options, such as the temperature range, furnace type, cooling system, automation features, or special measurement modes. Since each system can be customized to meet your specific application requirements, costs can vary significantly.
For an exact quote, please use our contact form to let us know your requirements – we will be happy to provide you with a customized quote.
How long is the delivery time for an HCS L36?
The delivery time for an HCS L36 depends largely on the selected options and the desired configuration. Additional features such as special furnaces, extended temperature ranges, automation, or customizations can increase production and preparation time, thereby extending the delivery time.
Please contact us via our contact form to receive a precise delivery time estimate based on your individual requirements.
What is the available temperature range?
Depending on the system configuration, the HCS L36 performs measurements from cryogenic temperatures up to +600 °C. Measurements can be performed under vacuum or in controlled gas atmospheres, making the system suitable for both basic research and the characterization of high-temperature semiconductors.
Can the HCS L36 be upgraded later?
Yes. The HCS L36 is based on a modular platform and can be expanded to meet your growing research needs. Optional expansions include AC Hall measurements, Seebeck characterization, illumination modules, additional sample holders, and advanced measurement configurations.
What is the difference between the "Basic," "Advanced," and "Ultimate" versions?
The HCS L36 is available in three configurations:
- Basic – Standard Hall effect measurements for routine characterization.
- Advanced – Extended temperature range and additional environmental control.
- Ultimate – A fully featured platform that supports AC Hall, Seebeck, illumination, and Hall bar measurements, as well as advanced research applications.
Software
Making values visible and comparable
Reverberation Measurement Functions
- Automatic Calculation of the Hall Coefficient
- Determination of the Charge Carrier Concentration
- Calculation of Hall Mobility
- Evaluation of Resistivity and Conductivity
- Identification of n-type and p-type charge carriers
- Van der Pauw Analysis
- Hall Bar Analysis
- Temperature-Dependent Hall Analysis
- Batch measurements and automated measurement procedures
General Software Features
- Modern, Windows®-based user interface
- Intuitive workflow for quick experiment setup
- Automatic Detection of Devices and Sample Holders
- User and Permissions Management
- Integrated Measurement Database
- Automatic report generation
- Project-Based Data Organization
- Export to CSV, Excel, and ASCII formats
Reverberation Measurement Functions
- Automatic Calculation of the Hall Coefficient
- Determination of the Charge Carrier Concentration
- Calculation of Hall Mobility
- Evaluation of Resistivity and Conductivity
- Identification of n-type and p-type charge carriers
- Van der Pauw Analysis
- Hall Bar Analysis
- Temperature-Dependent Hall Analysis
- Batch measurements and automated measurement procedures
Application
Semiconductors & Electronics
The continuous advancement of semiconductor devices requires highly precise characterization of electrical transport properties throughout the entire material development process. Hall effect measurements provide essential information about charge carrier concentration, mobility, resistivity, and conductivity, thereby enabling a detailed understanding of charge transport mechanisms in semiconductors and thin films.
The LINSEIS HCS L36 allows these parameters to be determined with high precision over a wide temperature range and under controlled environmental conditions. The system supports research, process optimization, and quality assurance for semiconductor wafers, thin films, thermoelectric materials, and modern electronic components.
Application Example: Antimony Thin Film (150 nm Sb)
Antimony (Sb) is a semimetal that is widely used in the field of thermoelectrics (in the form of alloys, e.g., Bi₁ − x Sb x) and is also increasingly being used in microelectronics. However, the largest application area for metallic antimony is in lead-antimony plates used in lead-acid batteries. The figure shows a complete characterization of a thin film deposited by sputtering onto a SiO₂/Si substrate using the Linseis HCS L36 Basic (option “RT up to 200 °C”).
Application Example: Bismuth-Antimony Thin Film (150 nm Bi₈₇Sb₁₃)
Bismuth-antimony alloys (Bi₁ − x Sb x) are binary alloys of bismuth and antimony in various mixing ratios. In particular, the Bi₀.₉Sb₀.₁ alloy was the first three-dimensional topological insulator to be experimentally demonstrated. These materials exhibit conductive surface states, but their interiors are insulating. Various BiSb alloys are also used in thermoelectric devices for the low-temperature range. The measurement described here was performed on a thermally evaporated Bi₈₇Sb₁₃ thin film.
Application example: N-type gallium nitride (1 μm) up to 600 °C
A 1 μm-thick n-type gallium nitride (GaN) layer was characterized using the HCS L36 Basic from room temperature up to 600 °C. The temperature-dependent Hall coefficient shows a continuous increase, followed by a stable plateau at higher temperatures, demonstrating reliable and reproducible measurements across the entire temperature range.
Application Example: ITO (indium tin oxide) up to 200 °C
Indium tin oxide (ITO) is a transparent conductive oxide (TCO) that is widely used in displays, touchscreens, and photovoltaic devices. It combines high electrical conductivity with excellent optical transparency, making it an ideal material for optoelectronic applications. The ITO layer, deposited using a sputtering process, was characterized using the LINSEIS HCS L36 Basic over a temperature range from room temperature to 200 °C.
Application Example: Double Layer of CuNi and Ti (300+60 nm) – HCS Basic vs. Advanced
A CuNi/Ti bilayer thin film (300 nm CuNi + 60 nm Ti) was characterized from room temperature
up to 200 °C using both the LINSEIS HCS Basic and the LINSEIS HCS Advanced.
Temperature-dependent measurements of the Hall coefficient and carrier mobility show
excellent agreement between the two systems over the entire temperature range.
The results show that the HCS Basic offers reliable and highly reproducible Hall characterization
for routine materials analysis, while the HCS Advanced builds on this proven
performance and features an expanded range of functions for more demanding research applications
as well as advanced electrical characterization. This ensures full compatibility of the
measurement methods and reliability in data exchange between the two platforms.
- Direct Comparison of HCS Basic and HCS Advanced
- CuNi/Ti two-layer thin film (300 nm + 60 nm)
- Temperature range: Room temperature to 200 °C
- Determination of Electrical Resistivity, Hall Coefficients, and Carrier Mobility
- Excellent agreement between the two devices
- Seamless transition from routine measurements to sophisticated research applications
Well informed
