HCS L36: Hall Effect Characterization System
The LINSEIS HCS L36 is a modular Hall-effect characterization system for the precise determination of electrical transport properties of semiconductors, thin films and functional materials. It simultaneously determines carrier concentration, Hall mobility, Hall coefficient and resistivity over a wide temperature range under vacuum or controlled atmospheres.
With three system configurations, interchangeable sample holders and optional Seebeck, Hall bar and illumination modules, the HCS L36 can be tailored to research, development and industrial quality control.
Unique Features
Electronics Upgrade
The redesigned HCS L36 electronics provide higher measurement accuracy, improved signal stability and faster data acquisition. Optimized hardware architecture combined with intelligent control electronics ensures reliable Hall-effect measurements over the entire temperature range.
The advantages of the new electronics include:
- Higher signal stability
Ensures reliable Hall voltage measurements, even for low-mobility or high-resistance samples. - Improved measurement accuracy
Optimized electronics minimize noise and increase the precision of electrical transport property determination. - Faster data acquisition
Shorter measurement times through optimized control and signal processing. - Excellent reproducibility
Highly stable electronics guarantee consistent results across repeated measurements and long-term operation.
New hardware features
- Halbach magnet technology
Generates a highly homogeneous magnetic field with improved field stability, enabling precise and reproducible Hall-effect measurements over the entire sample area. - Modular sample holder concept
Interchangeable plug-and-play sample holders support Van der Pauw, Hall bar, Seebeck and illuminated measurements while minimizing setup time. - Integrated EPROM sample holder recognition
Intelligent sample holders are detected automatically and the corresponding measurement parameters are loaded directly into the software, reducing user interaction and setup errors. - Wide-range temperature chamber
The gas-tight measurement chamber enables Hall measurements from cryogenic temperatures up to 600 °C under vacuum or controlled gas atmospheres. - Upgradeable system architecture
The modular hardware concept allows easy expansion from Basic to Advanced or Ultimate configurations, including AC Hall measurements, lock-in amplifier integration and additional characterization modules.
Design improvements
The redesigned HCS L36 combines a compact instrument layout with improved accessibility and ergonomic operation. The new housing design, intuitive touch display and modular architecture simplify daily operation while providing maximum flexibility for a wide range of Hall-effect characterization tasks.
Intelligent sample holder recognition
The HCS L36 automatically detects the installed sample holder using integrated EPROM technology. Measurement parameters are loaded automatically, reducing setup time and minimizing the risk of incorrect configurations.
Modular sample holder system
The modular plug-and-play concept supports a wide variety of sample holders for Van der Pauw, Hall bar, Seebeck and illuminated measurements. Sample holders can be exchanged within seconds without recalibration, allowing the system to adapt quickly to different applications.
Software improvements
The LiEAP software combines measurement control, automation and advanced data evaluation within a single platform. Automated measurement sequences, intelligent parameter management and comprehensive reporting improve efficiency while ensuring maximum reproducibility.
Upgradeable system architecture
The modular design allows the HCS L36 to grow with your requirements. The system can be upgraded from the Basic to the Advanced or Ultimate configuration and expanded with optional modules such as AC Hall measurements, lock-in amplifier integration, Seebeck measurements or illumination systems.
Highlights
Modular Sample Holders
Interchangeable holders for Van der Pauw, Hall Bar, Seebeck and illuminated measurements.
Wide temperature range: measurements from
low temperatures (LN2) up to 600°C possible.
Halbach Magnet Technology
Highly homogeneous magnetic field for maximum Hall measurement accuracy and reproducibility.
LiEAP Software Platform
Integrated measurement control, automation and advanced data evaluation.
Plug & Play Integration
Intelligent EPROM recognition automatically identifies installed sample holders and loads the correct measurement configuration.
Key Features
Wide temperature range
-196 °C to +600 °C
Precise Hall-effect characterization from cryogenic temperatures to high-temperature semiconductor analysis.
Magnetic field
Up to 1 Tesla Halbach magnet
Highly homogeneous magnetic field for maximum Hall measurement accuracy and reproducibility.
Electrical parameters
4 parameters in one measurement
Simultaneous determination of Hall coefficient, carrier concentration, Hall mobility and resistivity.
Modular configurations
Basic, Advanced & Ultimate
Upgradeable system architecture with optional AC Hall, Seebeck, Hall Bar and illumination modules.
Questions? Just give us a call!
+49 (0) 9287/880 0
Thursday from 8 am to 4 pm
and Friday from 8 am to 12 pm.
We are here for you!
Specifications
Magnetic field: Up to 1 T homogeneous Halbach magnet
Temperature range: -196 °C to +600 °C
Measured parameters: Hall coefficient, Hall mobility, carrier concentration and resistivity
Discover the high-performance HCS L36 – developed for maximum accuracy and flexibility in Hall-effect characterization:
- Measurement methods: DC Hall, AC Hall (optional), Van der Pauw, Hall Bar
- Sample holders: Standard, Hall Bar, Seebeck, illuminated and custom sample holders
- Sample size: Up to 12.5 × 12.5 mm² with plug-and-play sample holders
- Atmospheres: Vacuum and controlled inert, oxidizing or reducing gas atmospheres
- Upgradeable system: Expandable from Basic to Advanced and Ultimate with optional Seebeck, AC Hall and illumination modules
Method
Hall Effect Characterization
Hall-effect characterization is one of the most powerful methods for determining the electrical transport properties of conductive and semiconductive materials. By applying a magnetic field while driving a defined current through the sample, key electrical parameters can be determined accurately under controlled temperature and environmental conditions.
Unlike measurements that only determine electrical resistance, the Hall effect provides direct information about the type, concentration and mobility of charge carriers. This makes the method indispensable for semiconductor research, material development and quality control.
The HCS L36 combines precise magnetic field generation, accurate current control and advanced voltage detection in a single platform. Measurements can be performed from cryogenic temperatures up to 600 °C, under vacuum or controlled gas atmospheres, enabling reliable characterization of modern semiconductor materials, thin films and functional electronic materials.
Hall-effect characterization is particularly valuable for investigating carrier concentration, Hall mobility, resistivity, conductivity and Hall coefficient. These parameters provide comprehensive insight into charge transport mechanisms and support the development and optimization of electronic materials and devices.
Functional principle of the HCS L36 Basic
The HCS L36 Basic determines the electrical transport properties of conductive and semiconductive materials using the classical Hall-effect method. A defined electrical current is applied to the sample while a homogeneous magnetic field is generated by the integrated Halbach magnet. The resulting Hall voltage is measured with high precision.
During each measurement, the system continuously records the key electrical parameters required for comprehensive material characterization:
- Hall voltage – Generated by the interaction between the electrical current and the magnetic field.
- Electrical resistance – Measured simultaneously to determine the sample resistivity.
By combining both measurements under identical conditions, the HCS L36 Basic accurately determines Hall coefficient, carrier concentration, Hall mobility and resistivity. This configuration is ideally suited for routine Hall-effect characterization of bulk materials, thin films and semiconductor samples.
Functional principle of the HCS L36 Advanced
The HCS L36 Advanced extends the classical Hall-effect measurement by integrating a temperature-controlled measurement chamber. Samples can be characterized from cryogenic temperatures up to 600 °C under vacuum or controlled gas atmospheres while maintaining highly stable magnetic field conditions.
During the measurement, the system continuously records:
- Hall voltage – For determining the Hall coefficient and carrier concentration.
- Electrical resistance – For accurate resistivity and conductivity calculations.
- Temperature-dependent material properties – Characterized over the complete measurement range.
The combination of precise temperature control, homogeneous magnetic field generation and automated data acquisition enables comprehensive investigation of charge transport mechanisms, temperature-dependent electrical behavior and semiconductor performance.
Functional principle of the HCS L36 Ultimate
The HCS L36 Ultimate combines high-precision Hall-effect measurements with advanced electrical transport characterization in one fully modular platform. In addition to standard Hall measurements, the system supports optional AC Hall, Seebeck coefficient, Hall Bar, Gated Hall Bar and illumination measurements, allowing complete characterization of modern semiconductor materials and devices.
During operation, the HCS L36 Ultimate continuously records multiple electrical signals:
- Hall voltage – For determination of carrier concentration and Hall mobility.
- Electrical resistance – For precise resistivity and conductivity measurements.
- Additional transport properties – Such as Seebeck coefficient or photo-induced electrical effects (optional).
Its modular hardware architecture, interchangeable sample holders and integrated LiEAP software provide maximum flexibility for research, material development and advanced semiconductor characterization under precisely controlled environmental conditions.
Measured variables with Hall-effect measurements
Electrical transport properties determined using the Hall effect:
- Hall coefficient (RH)
- Carrier concentration
- Hall mobility
- Electrical resistivity
- Electrical conductivity
- Carrier type (n-type / p-type)
- Temperature-dependent electrical properties
- Magnetoresistance
Measured variables with Seebeck measurements
Thermoelectric properties using the optional Seebeck module:
- Seebeck coefficient
- Temperature-dependent Seebeck coefficient
- Thermoelectric voltage
- Carrier transport behavior
- Material type verification
- Thermoelectric material characterization
Measured variables with illuminated Hall measurements
Photoelectrical characterization under controlled illumination:
- Photoconductivity
- Photo-induced carrier concentration
- Photo-induced Hall mobility
- Photoresponse
- Charge carrier dynamics
- Semiconductor characterization under illumination
Complete your electrical characterization laboratory
LSR-3 (LSR L33)
DSC L63
Questions? Just give us a call!
+49 (0) 9287/880 0
Thursday from 8 am to 4 pm
and Friday from 8 am to 12 pm.
We are here for you!
HCS L36 explained – function, applications, features and frequently asked questions
How does a Hall-effect measurement work?
The HCS L36 measures the electrical transport properties of a material by applying a defined current while exposing the sample to a homogeneous magnetic field. The resulting Hall voltage is used together with the electrical resistance to calculate key parameters such as the Hall coefficient, carrier concentration, Hall mobility and resistivity. This non-destructive method is widely used for semiconductor characterization and electronic material research.
Which materials can be measured with the HCS L36?
The HCS L36 is suitable for a wide range of conductive and semiconductive materials, including:
- Silicon (Si)
- Gallium Nitride (GaN)
- Silicon Carbide (SiC)
- Gallium Arsenide (GaAs)
- Indium Phosphide (InP)
- Transparent conductive oxides (ITO, AZO)
- Thin films and coatings
- Thermoelectric materials
- Organic semiconductors
- Conductive polymers
Which sample holders are available?
The modular sample holder concept allows the HCS L36 to be adapted to different applications.
Available sample holders include:
- Van der Pauw sample holder
- Hall Bar sample holder
- Gated Hall Bar sample holder
- Seebeck sample holder
- Illuminated sample holder
- Customized sample holders for special applications
All sample holders feature plug-and-play functionality with automatic recognition for fast and reliable setup.
Which measurement methods are supported?
Depending on the selected configuration, the HCS L36 supports:
- DC Hall measurements
- AC Hall measurements (optional)
- Van der Pauw measurements
- Hall Bar measurements
- Gated Hall Bar measurements
- Seebeck coefficient measurements
- Illuminated Hall measurements
- Temperature-dependent Hall measurements
Which parameters can be determined?
The HCS L36 simultaneously determines several important electrical transport properties, including:
- Hall coefficient
- Carrier concentration
- Hall mobility
- Electrical resistivity
- Electrical conductivity
- Carrier type (n-type / p-type)
Optional configurations additionally enable Seebeck coefficient and photoelectrical measurements.
What does an HCS L36 cost?
The price of an HCS L36 system depends on the selected configuration and additional options, such as the temperature range, oven type, cooling system, automation functions or special measurement modes. As each system can be customized to your specific application requirements, costs can vary considerably.
For an exact quote, please use our contact form to let us know your requirements – we will be happy to provide you with a customized quote.
How long is the delivery time for an HCS L36?
The delivery time for an HCS L36 depends largely on the options selected and the desired configuration. Additional functions such as special ovens, extended temperature ranges, automation or special adaptations can increase the production and preparation effort and therefore extend the delivery time.
Please contact us via our contact form to receive a precise delivery time estimate based on your individual requirements.
Which temperature range is available?
Depending on the system configuration, the HCS L36 performs measurements from cryogenic temperatures up to +600 °C. Measurements can be carried out under vacuum or controlled gas atmospheres, making the system suitable for both fundamental research and high-temperature semiconductor characterization.
Can the HCS L36 be upgraded later?
Yes. The HCS L36 is based on a modular platform and can be expanded as your research requirements grow. Optional upgrades include AC Hall measurements, Seebeck characterization, illumination modules, additional sample holders and advanced measurement configurations.
What is the difference between the Basic, Advanced and Ultimate versions?
The HCS L36 is available in three configurations:
- Basic – Standard Hall-effect measurements for routine characterization.
- Advanced – Extended temperature capabilities and additional environmental control.
- Ultimate – Fully featured platform supporting AC Hall, Seebeck, illumination, Hall Bar measurements and advanced research applications.
Software
Making values visible and comparable
General Software Features
- Modern Windows®-based user interface
- Intuitive workflow for quick experiment setup
- Automated instrument and sample holder recognition
- User and permission management
- Integrated measurement database
- Automatic report generation
- Project-based data organization
- Export to CSV, Excel and ASCII formats
Hall Measurement Features
- Automatic Hall coefficient calculation
- Carrier concentration determination
- Hall mobility calculation
- Resistivity and conductivity evaluation
- n-type / p-type carrier identification
- Van der Pauw evaluation
- Hall Bar evaluation
- Temperature-dependent Hall analysis
- Batch measurements and automated sequences
Advanced Analysis & Automation
- AC Hall measurements (optional)
- Seebeck coefficient evaluation (optional)
- Illumination measurement support (optional)
- Real-time graphical data visualization
- Automatic curve fitting and data correction
- Comparison of multiple measurements
- Custom evaluation templates
- One-click PDF report generation
Application
Semiconductors & Electronics
The continuous development of semiconductor devices requires highly accurate characterization of electrical transport properties throughout the entire material development process. Hall-effect measurements provide essential information about carrier concentration, mobility, resistivity and conductivity, enabling a detailed understanding of charge transport mechanisms in semiconductors and thin films.
With the LINSEIS HCS L36, these parameters can be determined with high precision over a wide temperature range and under controlled environmental conditions. The system supports research, process optimization and quality assurance for semiconductor wafers, thin films, thermoelectric materials and advanced electronic components.
Application example: Antimony Thin Film (150 nm Sb)
Antimony (Sb) is a semimetal, which is widely used in the field of thermoelectrics (in form of alloys, e.g. Bi1−xSbx) and as an emerging application is the field of microelectronics. Nevertheless, the largest applications for metallic antimony are lead antimony plates in leadacid batteries. The figure shows a full characterization of a thin film on SiO2/Si substrate, prepared by sputter deposition, with the Linseis HCS L36 Basic (RT to 200 °C option).
Application example: Bismuth-antimony Thin Film (150 nm Bi87Sb13)
Bismuth-antimony alloys, (Bi1−xSbx) are binary alloys of bismuth and antimony in various ratios. In particular, the alloy Bi₀.₉Sb₀.₁ was the first three-dimensional topological insulator to be observed experimentally. These materials have conducting surface states but an insulating interior. Various BiSb alloys are also used in lowtemperature thermoelectric devices. The presented measurement was conducted on a thermally evaporated Bi87Sb13 thin film.
Application example: N-type gallium nitride (1μm) up to 600 °C
A 1 μm thick n-type gallium nitride (GaN) layer was characterized from room temperature up to 600 °C using the HCS L36 Basic.
The temperature dependent Hall coefficient shows a continuous increase followed by a stable plateau at higher temperatures, demonstrating reliable and reproducible measurements across the entire temperature range.
Application example: ITO (Indium tin oxide) up to 200 °C
Indium tin oxide (ITO) is a transparentconducting oxide (TCO) widely used in displays, touchscreens and photovoltaic devices. It combines high electrical conductivity with excellent optical transparency,
making it an ideal material for optoelectronic applications. The sputter-deposited ITO film was characterized using the LINSEIS HCS L36 Basic over a temperature range from RT to 200 °C.
Application example: Double layer CuNi & Ti (300+60 nm)
A CuNi/Ti double-layer thin film (300 nm CuNi + 60 nm Ti) was characterized from room temperature to 200 °C using two different LINSEIS HCS instruments: HCS Basic and HCS Advanced. The measurements include temperature-dependent resistivity, Hall coefficient and carrier mobility.
Despite the different instrument configurations, both systems exhibit highly comparable trends across the complete temperature range. The measured electrical transport properties show excellent agreement, demonstrating the consistency and reliability of the HCS platform. Minor deviations are well within the expected range for thin-film Hall measurements and confirm the robustness of both instrument versions.
The results shows that both HCS Basic and HCS Advanced deliver reliable and reproducible Hall characterization for thin metallic films, providing users with confidence when transferring measurement methods or comparing data across different systems.
- Direct comparison of HCS Basic and HCS Advanced
- CuNi/Ti double-layer (300 nm + 60 nm)
- Measurement range: RT to 200 °C
Determination of resistivity, Hall coefficient and mobility - Excellent agreement between two independent instruments
- Reliable characterization of temperature-dependent electrical transport properties
Well informed
