L79/HCS-Hall Effect Measurement System

L79/HCS-Hall Effect Measurement System

The L79/HCS System permits the characterization of semiconductor devices, it measures: mobility, resistivity, charge carrier concentration and Hall coefficient.

The roughed desktop setup offers different sample holders for various geometries and temperature requirements. An optional low temperature (LN2) attachments and a high temperature version up to 240°C ensure that all fields of application can be covered. Different permanent and electric magnets provide fixed or variable magnetic fields up to several tessla.

The comprehensive Windows based software provides I-V and I-R Plot.

The system can be used to characterize various materials including Si, SiGe, SiC, GaAs, InGaAs, InP, GaN (N Type & P Type can be measured), metal layers, oxides, etc.. Sample testing can be performed to demonstrate the system´s capability.

• Carrier concentration
• Resisitivity
• Mobility
• Conductivity
• Alpha (horizontal/vertical ration of resistance)
• Hall Coefficient
• Megnetoresistance


Input current: 500nA up to 10mA (500nA steps)
Hall tension: 0.5 up to 4.5V
Max. resolution: 65pV
Sample geometry:15x15, 20x20, 25x25mm, up to 5mm height
Magnetic field: up to 1T
Sensors: LN up to 240°C